Positive temperature coefficient resistor behavior in praseodymium-doped ZnO (000(1)over-bar) | (000(1)over-bar) boundaries

被引：3
|
作者：
Lee, Jong-Sook [1 ]
Kim, Yong [1 ]
Shin, Eui-Chol [1 ]
Maier, Joachim [2 ]
机构：
[1] Chonnam Natl Univ, Sch Mat Sci & Engn, Kwangju 500777, South Korea
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 20期
关键词：
bicrystals; cobalt; deep levels; II-VI semiconductors; praseodymium; Schottky barriers; wide band gap semiconductors; zinc compounds; ADMITTANCE SPECTROSCOPY; VOLTAGE CHARACTERISTICS;
D O I：
10.1063/1.3432444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Clear positive temperature coefficient resistor (PTCR) dc behavior has been shown in Pr-doped ZnO (000 (1) over bar) vertical bar (000 (1) over bar) bicrystals by electrical characterization over an unprecedentedly wide temperature range between 40 and 1070 K. With subtraction of the PTCR dc, the admittance can be described by a deep trap level at 0.26 eV but no clue to the origin of the PTCR behavior is provided. Capacitance-voltage characteristics revealed a maximum in the Schottky barrier heights consistent with the PTCR behavior. The PTCR behavior in Pr-doped ZnO c-axis oriented bicrystals is thus phenomenologically analogous to that of the ferroelectric BaTiO3. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432444]
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页数：3
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