Silicon-germanium microphotonic switches

被引：0

作者：

Li, BJ ^{[1
]}

Zhao, YZ ^{[1
]}

Li, J ^{[1
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷

关键词：

photonic switch; optical waveguide; optoelectronic device; optoelectronic integration;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two microphotonic switches have been proposed and fabricated in a silicon-based silicongermanium material system by using silicon optical bench technology. The switches are configured for a 3 x 2 symmetrical structure of three input waveguides, a central section, and two output waveguides. The operating wavelengths of the switches are specially designed in C-band, i.e. 1530 to 1570 nm. The measured average crosstalk is about - 20 dB, and total insertion loss is about 5 dB.

引用

页码：S19 / S23

页数：5

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