THz Diode Technology: Status, Prospects, and Applications

被引：221
|
作者：
Mehdi, Imran [1 ]
Siles, Jose V. [1 ]
Lee, Choonsup [1 ]
Schlecht, Erich [1 ]
机构：
[1] NASA, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
PROCEEDINGS OF THE IEEE | 2017年 / 105卷 / 06期
关键词：
Detector; frequency multiplier; heterodyne receiver; local oscillator; mixer; receiver; Schottky diode; spectroscopy; submillimeter-wave diodes; THz diode; QUANTUM CASCADE LASERS; MILLIMETER-WAVE; BROAD-BAND; LOW-NOISE; FREQUENCY-MULTIPLIERS; ROOM-TEMPERATURE; SCHOTTKY; GHZ; MIXERS; GAAS;
D O I：
10.1109/JPROC.2017.2650235
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz devices. As a low-parasitic device that operates well into the THz range, Schottky diodes provide useful detection and power generation for a number of practical applications. Mixers and multipliers, working as high as similar to 3 THz, have already been demonstrated. This paper reviews the current status of diode technology, detailing some of the different ways for fabricating THz chips. An overview regarding the current state of technology and performance for THz frequency multipliers and mixers is presented, along with applications enabled by these diodes.
引用
收藏
页码：990 / 1007
页数：18
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