An Ultra-Low-Supply Output-Capacitorless LDO with Signal- and Transient-Enhancement

被引:0
|
作者
Lin, Yajun [1 ]
Wan, Haozheng [2 ]
Yang, Jianxin [3 ]
Leung, Ka Nang [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China
[2] Harbin Inst Technol, Sch Astronaut, Harbin, Peoples R China
[3] South China Univ Technol, Sch Microelect, Guangzhou, Peoples R China
关键词
Charge pump; Low-dropout regulator; Power-management integrated circuits; FLIPPED VOLTAGE FOLLOWER; LOW-DROPOUT REGULATOR; AMPLIFIER;
D O I
10.1109/APCCAS55924.2022.10090352
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and -0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 mu A and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.
引用
收藏
页码:275 / 279
页数:5
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