Low Power Output-Capacitorless Class-AB CMOS LDO Regulator

被引：0

作者：

Shirmohammadli, Vahideh ^{[1
]}

Saberkari, Alireza ^{[1
]}

Martinez-Garcia, Herminio ^{[2
]}

Alarcon-Cot, Eduard ^{[2
]}

机构：

[1] Univ Guilan, Dept Elect Engn, Microelect Res Lab, Rasht, Iran

[2] Tech Univ Catalunya UPC, BarcelonaTech, Dept Elect Engn, Barcelona, Spain

来源：

2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2017年

关键词：

low-dropout regulator; class-AB LDO; complementary pass transistors; level shifter; sink and source;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an output-capacitorless class-AB low-dropout (LDO) regulator with load current sinking and sourcing ability. The proposed LDO consists of two complementary pass transistors, controlled using a level shifter technique. The transient improvement section applied to the gates of the pass devices enhances the transient performance of the LDO. The proposed LDO is designed in TSMC 0.18 mu m CMOS process with input and output voltages of 1.2-2.5 V and 1 V, respectively, 10 pF output capacitor, and quiescent current of 3.14 mu A, and is capable to sink and source maximum load currents of +/- 100 mA, giving the current efficiency of 99.99%.

引用

下载

页码：2627 / 2630

页数：4

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