Novel methods of TXRF analysis for silicon wafer surface inspection

被引：25

作者：

Fabry, L

Pahlke, S

Kotz, L

Wobrauschek, P

Streli, C

机构：

[1] Wacker Siltron AG, D-84479 Burghausen, Germany

[2] Atominst Wien, A-1020 Vienna, Austria

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1999年 / 363卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1007/s002160051145

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

TXRF became a standard, on-line inspection cool fur controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 10(10) atoms . cm(-2). The all-over cleanliness can be analyzed using VPD/TXRE For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10(5) atoms . cm(-2).

引用

页码：98 / 102

页数：5

共 50 条

[11] Novel Solution for In-line Analysis of Noble Metallic Impurities on Silicon Wafer Surface
Wu, Jiahong
Yamada, Yuji
Shimazaki, Ayako
2015 Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & 2015 International Symposium on Semiconductor Manufacturing (ISSM), 2015,
[12] Novel solution for in-line analysis of noble metallic impurities on silicon wafer surface
Semiconductor and Storage Products Company, Toshiba Corporation, 800, Yamanoisshiki-Cho, Yokkaichi, Mie-Pref
512-8550, Japan
Jt. e-Manuf. Des. Collab. Symp., eMDC Int. Symp. Semicond. Manuf., ISSM - Proc. Tech. Pap., 2015,
[13] WSPS: Wafer Surface Preparation System. A novel modular automated method capable of the ultratrace analytical inspection of 300 mm silicon wafer surfaces
Pahlke, S
Kotz, L
Ehmann, T
Eichinger, P
Huber, A
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 1524 - 1540
[14] Technique to analyze large area surface roughness of a wafer using TXRF
Noack, B
Hossain, TZ
IN-LINE CHARACTERIZATION TECHNIQUES FOR PERFORMANCE AND YIELD ENHANCEMENT IN MICROELECTRONIC MANUFACTURING II, 1998, 3509 : 228 - 234
[15] Analysis of light scattering by microparticles on the surface of a silicon wafer
Eremin, YA
Orlov, NV
OPTICS AND SPECTROSCOPY, 1997, 82 (03) : 434 - 438
[16] Fully automatic wafer surface contamination monitoring based on VPD-TXRF
Huber, A
Freudenberg, F
ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES, 1999, 99 (16): : 221 - 231
[17] Silicon cylinder grown on the surface of a silicon wafer
Zhang, YF
Li, GC
Lee, CS
Lee, ST
JOURNAL OF CRYSTAL GROWTH, 1997, 182 (3-4) : 337 - 340
[18] Scanning holographic scatterometer for wafer surface inspection
Klooster, A
Marks, J
Hanson, K
Sawatari, T
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 : 1314 - 1324
[19] Deposition uniformity inspection in IC wafer surface
Li, W. C.
Lin, Y. T.
Jeng, J. J.
Chang, C. L.
14TH INTERNATIONAL CONFERENCE ON METROLOGY AND PROPERTIES OF ENGINEERING SURFACES (MET & PROPS 2013), 2014, 483
[20] Preliminary analysis on surface contamination of silicon wafer by Cu and Fe
Zheng, Xuan
Cheng, Xuan
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 26 (05): : 970 - 976

← 1 2 3 4 5 →