Novel methods of TXRF analysis for silicon wafer surface inspection

被引：25
|
作者：
Fabry, L
Pahlke, S
Kotz, L
Wobrauschek, P
Streli, C
机构：
[1] Wacker Siltron AG, D-84479 Burghausen, Germany
[2] Atominst Wien, A-1020 Vienna, Austria
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1999年 / 363卷 / 01期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1007/s002160051145
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
TXRF became a standard, on-line inspection cool fur controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 10(10) atoms . cm(-2). The all-over cleanliness can be analyzed using VPD/TXRE For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10(5) atoms . cm(-2).
引用
收藏
页码：98 / 102
页数：5
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