Improvement of electrical and thermoelectric properties of MOCVD-grown InSb thin films using Si-doped interfacial layer

We characterized the electrical and thermoelectric properties of Sidoped InSb thin films into the interface. Their electrical properties were measured in the temperature range from 100K to 600K. The values of Hall mobility at room temperature were 11300cm(2)/Vs, 18800cm(2)/Vs, 17600cm(2)/Vs and 20100cm(2)/Vs for 0nm, 3nm, 170nm, and 500nm-thick Si-doped InSb layer, respectively. The value of mobility increased using Si-doping. This result shows that the electrical and thermoelectric properties were improved by Si doping into the interface. Therefore, Si doping makes a good effect on the interface between InSb layer and InAsSb buffer layer, resulting from that defects in the InSb layer near the interface decreased by Si doping.