Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys

被引：1
|
作者：
Muhowski, A. J. [1 ]
March, S. D. [1 ]
Maddox, S. J. [1 ]
Wasserman, D. [1 ]
Bank, S. R. [1 ]
机构：
[1] Univ Texas Austin, Elect & Comp Engn Dept, Austin, TX 78758 USA
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 25期
关键词：
INASSB; NOISE;
D O I：
10.1063/5.0074304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The minority carrier lifetime in extended-short-wavelength infrared and mid-wavelength infrared digitally-grown AlInAsSb alloys has been measured by time-resolved photoluminescence, ranging from 26 to 260ns depending on temperature and composition. The temperature dependence of the minority carrier lifetime and the power-dependence of continuous-wave photoluminescence indicate the presence of at least two deleterious Shockley-Read-Hall recombination centers, limiting the minority carrier lifetime of AlInAsSb alloys, particularly with non-zero Al concentration. Published under an exclusive license by AIP Publishing.
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Millimeter-wave narrow-gap uncooled hot-carrier detectors for active imaging
    Sizov, Fedir F.
    Zabudsky, Vyacheslav V.
    Golenkov, Aleksandr G.
    Shevchik-Shekera, Ann
    [J]. OPTICAL ENGINEERING, 2013, 52 (03)
  • [32] Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices
    Flatté, ME
    Grein, CH
    Hasenberg, TC
    Anson, SA
    Jang, DJ
    Olesberg, JT
    Boggess, TF
    [J]. PHYSICAL REVIEW B, 1999, 59 (08): : 5745 - 5750
  • [33] Near band edge absorption spectra of narrow-gap III-V semiconductor alloys
    Krishnamurthy, S
    Chen, AB
    Sher, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 4045 - 4048
  • [34] Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
    Andre, CL
    Boeckl, JJ
    Wilt, DM
    Pitera, AJ
    Lee, ML
    Fitzgerald, EA
    Keyes, BM
    Ringel, SA
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3447 - 3449
  • [35] Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility
    Yuan, Jun-Hui
    Zhang, Biao
    Song, Ya-Qian
    Wang, Jia-Fu
    Xue, Kan-Hao
    Miao, Xiang-Shui
    [J]. JOURNAL OF MATERIALS SCIENCE, 2019, 54 (09) : 7035 - 7047
  • [36] Mm-wave hybrid narrow-gap hot-carrier and Schottky diodes detector arrays
    Sizov, F.
    Zabudsky, V.
    Golenkov, A.
    Petriakov, V.
    Dvoretsky, S.
    Tsybrii, Z.
    [J]. OPTICAL SYSTEMS DESIGN 2012, 2012, 8550
  • [37] First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices
    Sun Wei-Feng
    Li Mei-Cheng
    Zhao Lian-Cheng
    [J]. ACTA PHYSICA SINICA, 2010, 59 (08) : 5661 - 5666
  • [38] FREE-CARRIER MAGNETOABSORPTION BY PHOTON-IONIZED IMPURITY MAGNETOPLASMON PROCESSES IN NARROW-GAP SEMICONDUCTORS
    SOMMER, E
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (29): : 5393 - 5403
  • [39] Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys
    Srinivasan Krishnamurthy
    A. -B. Chen
    A. Sher
    [J]. Journal of Electronic Materials, 1998, 27 : 694 - 697
  • [40] Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility
    Jun-Hui Yuan
    Biao Zhang
    Ya-Qian Song
    Jia-Fu Wang
    Kan-Hao Xue
    Xiang-Shui Miao
    [J]. Journal of Materials Science, 2019, 54 : 7035 - 7047
12345