Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys

被引：1
|
作者：
Muhowski, A. J. [1 ]
March, S. D. [1 ]
Maddox, S. J. [1 ]
Wasserman, D. [1 ]
Bank, S. R. [1 ]
机构：
[1] Univ Texas Austin, Elect & Comp Engn Dept, Austin, TX 78758 USA
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 25期
关键词：
INASSB; NOISE;
D O I：
10.1063/5.0074304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The minority carrier lifetime in extended-short-wavelength infrared and mid-wavelength infrared digitally-grown AlInAsSb alloys has been measured by time-resolved photoluminescence, ranging from 26 to 260ns depending on temperature and composition. The temperature dependence of the minority carrier lifetime and the power-dependence of continuous-wave photoluminescence indicate the presence of at least two deleterious Shockley-Read-Hall recombination centers, limiting the minority carrier lifetime of AlInAsSb alloys, particularly with non-zero Al concentration. Published under an exclusive license by AIP Publishing.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Minority carrier lifetimes in HgCdTe alloys
    Krishnamurthy, S.
    Berding, M. A.
    Yu, Z. G.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) : 1369 - 1378
  • [2] Minority carrier lifetimes in HgCdTe alloys
    S. Krishnamurthy
    M. A. Berding
    Z. G. Yu
    [J]. Journal of Electronic Materials, 2006, 35 : 1369 - 1378
  • [3] CARRIER DECAY LIFETIMES IN THE NARROW-GAP Hg1-xCdxTe AT THE INTERBAND AND INTRABAND EXCITATIONS
    Staryi, S.
    Lysjuk, I.
    Golenkov, O.
    Tsybrii, Z.
    Danilov, S.
    Gumenjuk-Sichevska, J.
    Andrieieva, K.
    Smolii, M.
    Sizov, F.
    [J]. UKRAINIAN JOURNAL OF PHYSICS, 2023, 68 (08): : 543 - 548
  • [4] Carrier transport mechanisms in narrow-gap photodiodes
    Sizov, FF
    Gumenjuk-Sichevskaya, JV
    Tetyorkin, VV
    [J]. EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 270 - 280
  • [5] Free carrier absorption in narrow-gap semiconductors
    Belyaev, A.E.
    Shevchenko, N.V.
    Demidenko, Z.A.
    [J]. Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves, 1991, 10 (04): : 241 - 245
  • [6] INVESTIGATION OF THE MINORITY-CARRIER LIFETIME IN THE NARROW-GAP REGION OF INGAASP/INP DIODE STRUCTURES
    GORELENOK, AT
    MAMUTIN, VV
    PULYAEVSKII, DV
    REKHVIASHVILI, DN
    SHMIDT, NM
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 912 - 913
  • [7] SPECIAL FEATURES OF CARRIER SCATTERING IN NARROW-GAP SEMICONDUCTORS
    SIZOV, FF
    LASHKAREV, GV
    RADCHENKO, MV
    ORLETSKII, VB
    GRIGOROVICH, ET
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1075 - 1079
  • [8] DYNAMIC DIELECTRIC RESPONSE TO CARRIER CARRIER INTERACTIONS IN NARROW-GAP SEMICONDUCTORS
    MEYER, JR
    BARTOLI, FJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1752 - 1755
  • [9] CARRIER CONFINEMENT IN ZERO-GAP SEMICONDUCTORS - NEW NARROW-GAP STRUCTURES
    BROERMAN, JG
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 436 - 436
  • [10] THERMAL ANNEALING OF NARROW-GAP HGTE-BASED ALLOYS
    KREMER, RE
    TANG, Y
    MOORE, FG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 797 - 803
12345