Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

被引:19
|
作者
Kim, Youngkuk [1 ]
Jang, M. H. [1 ]
Jeong, K. [1 ]
Cho, M. -H. [1 ]
Do, K. H. [2 ]
Ko, D. -H. [2 ]
Sohn, H. C. [2 ]
Kim, Min Gyu [3 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea
[3] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, Kyungbuk, South Korea
关键词
D O I
10.1063/1.2844878
中图分类号
O59 [应用物理学];
学科分类号
摘要
For this study, the phase-change materials Ge2Sb2Te5 and N-doped Ge2Sb2Te5 films were investigated using x-ray absorption near-edge structure and extended x-ray absorption fine structure. During the phase transition, change in electronic structure is observed by the shift of the absorption edge energy, i.e., structural coordination of Ge-Te changes from tetrahedral to octahedral coordination, of which the interatomic distances are 3.12 and 2.83 A, respectively. In addition, nitrogen incorporation into the film led to a p-p orbital hybridization and a different crystallization behavior. The hybridization caused by the formation of a Ge-N bond was related to suppression of the phase transition. (c) 2008 American Institute of Physics.
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页数:3
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