Epitaxial growth of InGaSb layers on GaAs substrates for fabrication of InGaSb-based THz-QCLs

被引：0
|
作者：
Yasuda, Hiroaki [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
来源：
2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2018年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an InxGa1-xSb graded buffer layer.
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页数：2
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