Low temperature epitaxy of n-doped silicon thin films using plasma enhanced chemical vapor deposition

被引：0
|
作者：
Baroughi, Mahdi Farrokh [1 ]
El-Goharyi, Hassan G. [1 ]
Cheng, Cherry Y. [1 ]
Sivoththaman, Siva [1 ]
机构：
[1] Univ Waterloo, Waterloo, ON N2L 3G1, Canada
来源：
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007 | 2007年 / 989卷
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D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Highly conductive epiraxial silicon thin films, with conductivities more than 680 Omega(-1)cm(-1), were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300 degrees C. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).
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页码：151 / 156
页数：6
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