The improvement in oxidation resistance of carbon by a graded SiC/SiO2 coating

被引:48
|
作者
Kwon, OS [1 ]
Hong, SH [1 ]
Kim, H [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
关键词
carbon; coatings; FGM; oxidation resistance; SiC/SiO2;
D O I
10.1016/S0955-2219(03)00098-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A dense functionally gradient SiC/SiO2 coating has been developed to improve the oxidation resistance of carbon at elevated temperatures. SiC was coated on the surface of a graphite substrate by a reaction between thermally evaporated silicon and carbon at 1400 degreesC. The SiO2 layer was deposited by exposing the SiC coated specimens next to a bed of Si powder in a flowing H-2-H2O gas (P-H2O = 2.6 x 10(-2) atm) at 1400 degreesC. The formed SiC/SiO2 layers were dense and had gradient compositions with good adhesion to the carbon substrate. However, as the coating thickness increased, the coating layer became cracked and delaminated from the substrate due to thermal stress. The specimens with the continuous SiC/SiO2 layer showed a remarkably improved oxidation resistance up to 1200 degreesC. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3119 / 3124
页数:6
相关论文
共 50 条
  • [31] Carbon Interlayer Between CVD SiC and SiO2 in High-Temperature Passive Oxidation
    Katsui, Hirokazu
    Oguma, Miyuki
    Goto, Takashi
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2014, 97 (05) : 1633 - 1637
  • [32] Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study
    Akiyama, Toru
    Nakamura, Kohji
    Ito, Tomonori
    Kageshima, Hiroyuki
    Uematsu, Masashi
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)
  • [33] Defect Formation in SiO2 Formed by Thermal Oxidation of SiC
    Chokawa, Kenta
    Araidai, Masaaki
    Shiraishi, Kenji
    2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM), 2017, : 242 - 243
  • [34] Growth stress in SiO2 during oxidation of SiC fibers
    Hay, R. S.
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (06)
  • [35] Growth of SiO2 on SiC by dry thermal oxidation:: mechanisms
    Vickridge, I.
    Ganem, J.
    Hoshino, Y.
    Trimaille, I.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) : 6254 - 6263
  • [36] Improved oxidation procedures for reduced SiO2/SiC defects
    Lipkin, LA
    Palmour, JW
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 909 - 915
  • [37] Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
    Palmieri, R.
    Radtke, C.
    Boudinov, H.
    da Silva, E. F., Jr.
    APPLIED PHYSICS LETTERS, 2009, 95 (11)
  • [38] Interaction of SiC thermal oxidation by-products with SiO2
    Radtke, C.
    Stedile, F. C.
    Soares, G. V.
    Krug, C.
    da Rosa, E. B. O.
    Driemeier, C.
    Baumvol, I. J. R.
    Pezzi, R. P.
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [39] Structure and energetics of carbon defects in SiC (0001)/SiO2 systems at realistic temperatures: Defects in SiC, SiO2, and at their interface
    Kobayashi, Takuma
    Matsushita, Yu-ichiro
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (14)
  • [40] Oxidation and ablation resistance of ZrB2-SiC-Si/B-modified SiC coating for carbon/carbon composites
    Tao, Feng
    He-Jun, Li
    Xiao-Hong, Shi
    Xi, Yang
    Shao-Long, Wang
    CORROSION SCIENCE, 2013, 67 : 292 - 297