Analysis of MCCT's turn-on and short circuit operation

被引：1

作者：

Iwaana, T ^{[1
]}

Iwamuro, N ^{[1
]}

Harada, Y ^{[1
]}

Onozawa, Y ^{[1
]}

Seki, Y ^{[1
]}

机构：

[1] Fuji Elect Corp R&D Ltd, Adv Device Technol Lab, Matsumoto, Nagano 3900821, Japan

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Turn-on characteristic and oscillation waveform in the short circuit test of 1200V MOS Controlled Cascode Thyristor (MCCT) are described for the first time. Smaller turn-on loss can be successfully achieved in the MCCT than that of IGBT which was fabricated using the same epitaxial wafer with the MCCT. In the MCCT, the oscillation waveform in the short circuit test takes place in the whole duration. However, the smaller and optimized gate capacitance successfully achieves an elimination of the oscillation without degradation of its electrical characteristics.

引用

页码：163 / 166

页数：4

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