Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers

被引：2
|
作者：
Kita, Koji [1 ]
Eika, Atsushi [1 ]
Nishimura, Tomonori [1 ]
Nagashio, Kosuke [1 ]
Toriumi, Akira [1 ]
机构：
[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS | 2011年 / 470卷
关键词：
Resistive RAM; nickel oxide; forming process; NANOFILAMENTS;
D O I：
10.4028/www.scientific.net/KEM.470.188
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two kinds of NiO films with different crystallinity were fabricated by controlling the film deposition conditions. The well-crystalline film showed resistive switching characteristics whereas the poorly-crystalline film did not. From I-V characteristics of the NiO bilayer film consisting of those two kinds of films, it was found that the initial characteristics significantly differed according to the bias polarity. The forming voltage became lower and had less variety when the well-crystalline side was positively-biased. These results suggest that the forming voltage and currents are controllable by modifying the film properties at the metal-oxide interfaces.
引用
收藏
页码：188 / 193
页数：6
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