Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

被引：1
|
作者：
Inokawa, Hiroshi [1 ]
Du, Wei [1 ]
Kawai, Mitsuru [1 ]
Satoh, Hiroaki [1 ]
Ono, Atsushi [1 ]
Singh, Vipul [1 ]
机构：
[1] Shizuoka Univ, Elect Res Inst, Naka Ku, Hamamatsu, Shizuoka 4328011, Japan
来源：
INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION | 2011年 / 222卷
关键词：
Single-photon detection; Metal-oxide-semiconductor field-effect transistor (MOSFET); Silicon-on-insulator (SOI); Radio-frequency (RE) reflectance; Surface plasmon antenna; TRANSISTOR;
D O I：
10.4028/www.scientific.net/AMR.222.3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A unique single-photon detector is reported, which utilizes scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.
引用
收藏
页码：3 / 7
页数：5
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