Active pixel sensors: the sensor of choice for future space applications

被引:1
|
作者
Leijtens, Johan [1 ]
Theuwissen, Albert [2 ]
Rao, Padmakurnar R. [2 ]
Wang, Xinyang [2 ]
Xie, Ning [2 ]
机构
[1] TNO Sci & Ind, Postbus 155, NL-2600 AD Delft, Netherlands
[2] Delft Univ Technol, NL-2600 CD Delft, Netherlands
关键词
0,18 micron; CMOS; APS; sunsensor; microned; TNO; TU-Delft; radiation tolerant; low noise;
D O I
10.1117/12.735512
中图分类号
TP7 [遥感技术];
学科分类号
081102 ; 0816 ; 081602 ; 083002 ; 1404 ;
摘要
It is generally known that active pixel sensors (APS) have a number of advantages over CCD detectors if it comes to cost for mass production, power consumption and ease of integration. Nevertheless, most space applications still use CCD detectors because they tend to give better performance and have a successful heritage. To this respect a change may be at hand with the advent of deep sub-micron processed APS imagers (< 0.25-micron feature size). Measurements performed on test structures at the University of Delft have shown that the imagers are very radiation tolerant even if made in a standard process without the use of special design rules. Furthermore it was shown that the 1/f noise associated with deep sub-micron imagers is reduced as compared to previous generations APS imagers due to the improved quality of the gate oxides. Considering that end of life performance will have to be guaranteed, limited budget for adding shielding metal will be available for most applications and lower power operations is always seen as a positive characteristic in space applications, deep sub-micron APS imagers seem to have a number of advantages over CCD's that will probably cause them to replace CCD's in those applications where radiation tolerance and low power operation are important.
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页数:8
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