Effect of Annealing on the Electrical Properties of Thallium-Doped PbTe Single Crystals

被引：0
|
作者：
Ahmedova, G. A. [1 ]
Abdinova, G. J. [1 ]
Abdinov, J. Sh. [1 ]
机构：
[1] Natl Acad Sci Azerbaijan, Abdullaev Inst Phys, AZ-1143 Baku, Azerbaijan
来源：
SEMICONDUCTORS | 2011年 / 45卷 / 02期
关键词：
IV-VI SEMICONDUCTORS; SELF-COMPENSATION; LEAD-TELLURIDE;
D O I：
10.1134/S1063782611020035
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
It is found that electrical parameters of PbTe single crystals, the character of the dependences of these parameters on temperature and Tl impurity concentration, and the conductivity type (signs of a and R) are governed to a great extent by the temperature of preliminary annealing. The cause of this effect is that the concentration of doubly charged vacancies in the tellurium sublattice increases with an increase in the annealing temperature, as a result of which the formation of electrically neutral or singly charged complexes of impurity-vacancy type becomes more likely.
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页码：145 / 147
页数：3
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