Preparation of transparent conducting Al-doped ZnO thin films by single source chemical vapor deposition

被引：0
|
作者：
Zhang, W. Y. [1 ,2 ]
He, D. K. [2 ]
Liu, Z. Z. [1 ]
Sun, L. J. [2 ]
Fu, Z. X. [2 ]
机构：
[1] Luoyang Normal Coll, Coll Phys & Elect Informat, Luoyang 471022, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 11期
关键词：
Chemical vapor deposition; AZO; Thin film; OPTICAL-PROPERTIES;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conducting Al-doped zinc oxide (AZO) thin films have been fabricated on quartz substrates by single source CVD system. Effects of annealing temperature and Al-doping concentration on the optical and electrical properties of AZO films were investigated. AZO film with Al/Zn ratio of 1 % annealed at 700 degrees C has high optical transmittance of 88.2 % and low electrical resistivity of 1.85x10(-2) Omega cm. Hall measurements and absorption edge analysis demonstrate that resistivity of AZO films is determined by carrier concentration rather than carrier mobility.
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页码：1651 / 1654
页数：4
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