Digital In-line Holographic Microscopy at 1310nm with Superluminescent Light Emitting Diode Broadband Source

被引：0

作者：

Qu Weijuan ^{[1
]}

Choo, Chee Oi ^{[1
]}

Yu Yingjie ^{[2
]}

Asundi, Anand ^{[3
]}

机构：

[1] Ngee Ann Polytech, NACOI, 535 Clementi Rd, Singapore 599489, Singapore

[2] Shanghai Univ, Dept Precis Mech Engn, Shanghai 200072, Peoples R China

[3] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

来源：

FOURTH INTERNATIONAL CONFERENCE ON EXPERIMENTAL MECHANICS | 2010年 / 7522卷

关键词：

Digital in-line holographic microscopy; Infrared;

D O I：

10.1117/12.851401

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

Infrared digital in-line microscopic holography is achieved using a superlumiescent light emitting diode broadband source at 1310nm. It can be applied for the inspection of bulk material defects as well as some surface defects in silicon wafer. The imaging of a calibrated positive USAF target is used for the demonstration of the resolution improvement. Two pieces of semiconductor silicon wafer each with a slot 10 mu m in width are placed perpendicular with a 4mm gap to demonstrate the 3D imaging from a single hologram.

引用

页数：6

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