The effects of microstructure on NO2 sensing properties were investigated for WO3 thin film sensors fabricated on SiO2/Si substrate equipped with Au comb-type microelectrodes. The effect of grain size for thin WO3 sensors was explained with the conventional model. On-the other hand, the high sensitivity NO2 sensor was obtained due to unique thickness effect. For the sensors using WO3 powders calcined at 300-400 degreesC (grain size 18-20 run), the sensitivity to dilute. NO2 had a maximum at optimal thickness. The optimal thicknesses were 7 and 25 mum for the sensors using 400 and 300 degreesC calcined powders, respectively. These sensors showed the extremely high sensitivity (Rg/Ra) of 6.5-45 to 0.02-0.05 ppm NO2 at 200 degreesC, suggesting the. possibility of environmental NO2 monitoring. Such a behavior was not observed for the sensors having large grain (calcination temperature : 600-850 degreesC). In this case, the sensitivity to NO2 monotonously decreased with increasing film thickness.
机构:
Univ Delhi, Dept Phys & Astrophys, New Delhi 110007, India
Univ Delhi, Acharya Narendra Dev Coll, Dept Zool, New Delhi 110 019, IndiaUniv Delhi, Dept Phys & Astrophys, New Delhi 110007, India
Singh, Jatinder Pal
Sharma, Anjali
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Univ Delhi, Atma Ram Sanatan Dharma Coll, Dept Phys, New Delhi 110021, India
Univ Delhi, Inst Eminence, New Delhi 110007, IndiaUniv Delhi, Dept Phys & Astrophys, New Delhi 110007, India
Sharma, Anjali
Tomar, Monika
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Univ Delhi, Inst Eminence, New Delhi 110007, India
Univ Delhi, Dept Phys, Miranda House, New Delhi 110007, Delhi, IndiaUniv Delhi, Dept Phys & Astrophys, New Delhi 110007, India
Tomar, Monika
Chowdhuri, Arijit
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Univ Delhi, Acharya Narendra Dev Coll, Dept Zool, New Delhi 110 019, IndiaUniv Delhi, Dept Phys & Astrophys, New Delhi 110007, India
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Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
Grilli, ML
Kaabbuathong, N
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Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
Kaabbuathong, N
Dutta, A
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Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
Dutta, A
Di Bartolomeo, E
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Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
Di Bartolomeo, E
Traversa, E
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Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, ItalyUniv Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
机构:
Univ Tunis El Manar, Fac Sci, LMOP, Tunis, TunisiaUniv Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, France
Belkacem, W.
Labidi, A.
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Univ 7 novembre, IPEST, URPSC, Tunis, TunisiaUniv Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, France
Labidi, A.
Guerin, J.
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Univ Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, FranceUniv Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, France
Guerin, J.
Mliki, N.
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Univ Tunis El Manar, Fac Sci, LMOP, Tunis, TunisiaUniv Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, France
Mliki, N.
Aguir, K.
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Univ Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, FranceUniv Paul Cesanne, Fac Sci & Tech St Jerome S152, UMR CNRS 6242, IM2NP, F-13397 Marseille, France
机构:
G Device Ctr Kansai, BEANS, Shiga, JapanG Device Ctr Kansai, BEANS, Shiga, Japan
Dao, Dzung Viet
Li, Ling-Han
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Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1138654, Japan
Ritsumeikan Univ, Grad Sch Sci & Engn, Kusatsu, JapanG Device Ctr Kansai, BEANS, Shiga, Japan