Evaluation of ultratrace metallic elements in poly-SiGe thin films

被引：3
|
作者：
Yamada, Y [1 ]
Kozuka, S [1 ]
Shimazaki, A [1 ]
Takenaka, M [1 ]
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Kawasaki, Kanagawa 2108582, Japan
来源：
ULTRA CLEAN PROCESSING OF SILICON SURFACES V | 2003年 / 92卷
关键词：
poly-SiGe film; ICP-MS; metallic impurity;
D O I：
10.4028/www.scientific.net/SSP.92.97
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A new sensitive analytical method to evaluate metallic impurities in poly-SiGe thin film has been developed. It was found that the Ge matrix could be removed effectively by adding HCl after etching of the poly-SiGe film. We applied this method successfully to investigate the cleanliness of film deposition process and to obtain the Hf impurity depth profile in poly-SiGe films.
引用
收藏
页码：97 / 100
页数：4
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