Room-temperature spin-orbit magnetic fields in slightly misoriented (110) InGaAs/InAlAs multiple quantum wells

被引:3
|
作者
Nakanishi, Koichi [1 ]
Arikawa, Ayuki [1 ]
Saito, Yasuhito [1 ]
Iizasa, Daisuke [2 ]
Iba, Satoshi [3 ]
Ohno, Yuzo [4 ]
Yokota, Nobuhide [5 ]
Kohda, Makoto [2 ]
Ishitani, Yoshihiro [1 ]
Morita, Ken [1 ]
机构
[1] Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan
[2] Tohoku Univ, Dept Math Sci, Sendai, Miyagi 9808579, Japan
[3] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[4] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[5] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
基金
日本学术振兴会;
关键词
2-DIMENSIONAL ELECTRON; RELAXATION;
D O I
10.1063/5.0055876
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin-orbit (SO) magnetic fields caused by the Dresselhaus SO interaction in slightly misoriented (110) InGaAs/InAlAs quantum wells (QWs) are investigated using the time-resolved and spatially resolved optical Kerr rotation technique. The Dresselhaus SO magnetic field is directed along the in-plane in the (001) QWs and along the out-of-plane in the (110) QWs. On the contrary, in QWs grown on a slightly misoriented (110) substrate, the out-of-plane and in-plane components of the Dresselhaus SO magnetic field coexist. In this study, the strong out-of-plane and the in-plane SO magnetic fields peculiar to the misoriented (110) InGaAs QWs are revealed at room temperature by analyzing spatially resolved diffusion-driven spin precession dynamics with a diagonally applied external magnetic field. Based on the scan position dependence of the spin precession frequency induced by the SO magnetic field, the simultaneous observations of the out-of-plane and the in-plane SO magnetic fields are achieved and Dresselhaus SO parameter is extracted to be 1.9 x 10(-12) eV m. This value accounts for the scan position dependencies with various magnetic fields and reveals the reliability of the extracted SO parameter. Published under an exclusive license by AIP Publishing.
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页数:5
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