Atomic layer deposition of aluminum (111) thin film by dimethylethylaminealane precursor

被引：5
|
作者：
Okasha, Sameh [1 ,2 ]
Sekine, Yoshiaki [3 ]
Sasaki, Satoshi [3 ]
Harada, Yuichi [1 ]
机构：
[1] Kyushu Univ, Global Innovat Ctr, 6-1 Kasuga Koen, Kasuga, Fukuoka 8168580, Japan
[2] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Mol & Mat Sci Dept, Kasuga, Fukuoka 8168580, Japan
[3] NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
来源：
THIN SOLID FILMS | 2021年 / 732卷
关键词：
Aluminum (111) thin film; atomic layer deposition; dimethylethylaminealane; selective growth; superconducting thin film; CHEMICAL-VAPOR-DEPOSITION; SUPERCONDUCTIVITY; CVD;
D O I：
10.1016/j.tsf.2021.138784
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.
引用
收藏
页数：4
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