Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

被引：7
|
作者：
Wenus, J [1 ]
Rutkowski, J [1 ]
Rogalski, A [1 ]
机构：
[1] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
来源：
PHOTODETECTORS: MATERIALS AND DEVICES VI | 2001年 / 4288卷
关键词：
HgCdTe photodiodes; heterojunction; homojunction; quantum efficiency; R(0)A product;
D O I：
10.1117/12.429419
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the paper the performance of P-on-n double-layer hetrojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R(0)A product is analyzed. The effect of lateral collection of diffusion current and photocurrent on photodiode parameters is also shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p-side doping concentration on photodiode parameters is described briefly.
引用
收藏
页码：335 / 344
页数：4
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