In-situ measurement of temperature variation in Si wafer during millisecond rapid thermal annealing induced by thermal plasma jet irradiation

被引：17
|
作者：
Furukawa, Hirokazu [1 ]
Higashi, Seiichiro [1 ]
Okada, Tatsuya [1 ]
Kaku, Hirotaka [1 ]
Murakami, Hideki [1 ]
Miyazaki, Seiichi [1 ]
机构：
[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Intergrat Sci, Hiroshima 7398530, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期
关键词：
in-situ measurement; temperature measurement; Si wafer; RTA; millisecond time resolution;
D O I：
10.1143/JJAP.47.2460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An in-situ measurement technique for the temperature profile of a Si wafer during millisecond rapid thermal annealing has been developed. By analyzing the oscillation observed in transient reflectivity of the Si wafer during annealing, we obtain a transient temperature profile with a millisecond time resolution. Since this measurement is based on optical interference, a highly sensitive temperature measurement with an accuracy of 2K is expected. Using this measurement technique, we controlled Si wafer surface temperature during thermal plasma jet irradiation with the heating and cooling rates in the order of 10(4)-10(5)K/s.
引用
收藏
页码：2460 / 2463
页数：4
相关论文
共 50 条
  • [21] Effects of wafer emissivity on rapid thermal processing temperature measurement
    Chen, DH
    DeWitt, DP
    Tsai, BK
    Kreider, KG
    Kimes, WA
    TEMPERATURE: ITS MEASUREMENT AND CONTROL IN SCIENCE AND INDUSTRY, VOL 7, PTS 1 AND 2, 2003, 684 : 735 - 740
  • [22] Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation
    Matsumoto, Kazuya
    Ohta, Akio
    Miyazaki, Seiichi
    Higashi, Seiichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [23] Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing
    Hiroshige, Yasuo
    Higashi, Seiichiro
    Matsumoto, Kazuya
    Miyazaki, Seiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)
  • [24] DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING
    JONGSTE, JF
    OOSTERLAKEN, TGM
    BART, GCJ
    JANSSEN, GCAM
    RADELAAR, S
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 2830 - 2836
  • [25] Correlation between annealing temperature and crystallinity of Si films prepared by thermal plasma jet crystallization technique
    Kaku, Hirotaka
    Higashi, Seiichiro
    Okada, Tatsuya
    Murakami, Hideki
    Miyazaki, Seiichi
    Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006, 2007, 910 : 583 - 588
  • [26] In-situ measurement of thermal strain during fusion welding
    Reisgen, U.
    Geffers, C.
    Sharma, R.
    von der Heydt, J.
    INTERNATIONAL CONFERENCE ON RESIDUAL STRESSES 9 (ICRS 9), 2014, 768-769 : 644 - 651
  • [27] Wafer temperature measurement in a rapid thermal processor with modulated lamp power
    Microelectronics Group, Lucent Technologies Inc., Orlando, FL 32819, United States
    不详
    J Electron Mater, 12 (1376-1384):
  • [28] Wafer temperature measurement in a rapid thermal processor with modulated lamp power
    Nguyenphu, B
    Fiory, AT
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) : 1376 - 1384
  • [29] Wafer temperature measurement in a rapid thermal processor with modulated lamp power
    B. Nguyenphu
    A. T. Fiory
    Journal of Electronic Materials, 1999, 28 : 1376 - 1384
  • [30] Variation of axial and radial temperature in an expanded thermal plasma jet
    Bora, B.
    Kakati, M.
    Das, A. K.
    JOURNAL OF PLASMA PHYSICS, 2010, 76 : 699 - 707
12345