Magnetic Properties of Zn1-xCoxO Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N2O Atmosphere

被引：2
|
作者：
Lee, J. C. [1 ]
Lee, Y. H. [1 ]
Min, J. F. [1 ]
Su, C. W. [2 ]
Lee, J. S. [3 ]
Hsu, H. S. [3 ]
机构：
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan
[2] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan
[3] Natl Ping Tung Univ Educ, Dept Appl Phys, Pingtung City 90003, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 10期
关键词：
Diluted magnetic semiconductor; magnetron sputtering; nitrogen doping; ZnCoO;
D O I：
10.1109/TMAG.2011.2146243
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Zn1-xCoxO and Zn1-xCoxNyO1-y thin films were grown by RF magnetron co-sputtering, but in different sputtering gases (Ar and N2O, respectively). X-ray diffraction analysis indicated that all the samples had c-axis preferred orientation, without any segregated secondary phase. UV-visible spectroscopy and X-ray photoelectron spectroscopy showed that Co2+ ions substituted tetrahedrally co-ordinated Zn2+ ions site for the films. The electrical and magnetic properties were investigated by the Hall effect and superconducting quantum interference device (SQUID) measurements, respectively. The Zn1-xCoxO had n-type conduction with electron concentration of 10(19) cm(-3), and exhibited paramagnetism. Due to the charge compensation by N doping, the Zn1-xCoxNyO1-y possessed large resistivity, and also presented paramagnetism, besides the film Zn1-xCoxNyO1-y (x = 0.0162, y = 0.0004), which possessed room temperature ferromagnetism (RTFM).
引用
收藏
页码：3995 / 3998
页数：4
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