High performance avalanche quantum dot photodetector for mid-infrared detection

被引：5
|
作者：
Zavvari, Mahdi [1 ]
Ahmadi, Vahdi [2 ]
Mir, Ali [3 ]
机构：
[1] Islamic Azad Univ, Urmia Branch, Dept Elect Engn, Orumiyeh, Iran
[2] Tarbiat Modares Univ, Dept Elect Engn, Tehran, Iran
[3] Lorestan Univ, Dept Elect Engn, Khorramabad, Iran
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期
关键词：
Quantum dot infrared photodetector; Avalanche multiplication; Signal-to-noise ratio; Specific detectivity; 3 dB bandwidth; INFRARED PHOTODETECTOR; SEPARATE ABSORPTION; PHOTODIODES; CHARGE; MODEL; GAAS; GAIN;
D O I：
10.1007/s11082-014-9977-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Application of a multiplication region in the structure of a quantum dot infrared photodetector (QDIP) is studied. Device is based on separated absorption and multiplication layers at which the generated photocurrent is gained by avalanche multiplication and higher responsivity is expected. Numerical simulation of the device performance shows larger responsivity and specific detectivity () compared with a conventional QDIP. The operating temperature of proposed device is also increased to 150 K with higher responsivity about 6 A/W and specific detectivity of about at . The results also show acceptable signal-to-noise ratio of 11 dB at T 120 K. Dynamic behaviour of detector is also studied and frequency response calculations predict 3-dB bandwidth of device about 70 GHz.
引用
收藏
页码：1207 / 1217
页数：11
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