Synthesis and x-ray characterization of sputtered bi-alkali antimonide photocathodes

被引：19

作者：

Gaowei, M. ^{[1
]}

Ding, Z. ^{[2
]}

Schubert, S. ^{[3
]}

Bhandari, H. B. ^{[4
]}

Sinsheimer, J. ^{[2
]}

Kuehn, J. ^{[5
]}

Nagarkar, V. V. ^{[4
]}

Marshall, M. S. J. ^{[4
]}

Walsh, J. ^{[1
]}

Muller, E. M. ^{[2
]}

Attenkofer, K. ^{[1
]}

Frisch, H. J. ^{[6
]}

Padmore, H. ^{[3
]}

Smedley, J. ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

[2] SUNY Stony Brook, Stony Brook, NY 11794 USA

[3] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[4] Radiat Monitoring Devices, Watertown, MA 02472 USA

[5] Helmholtz Zentrum Berlin, D-12489 Berlin, Germany

[6] Univ Chicago, Chicago, IL 60637 USA

来源：

APL MATERIALS | 2017年 / 5卷 / 11期

关键词：

D O I：

10.1063/1.5010950

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Advanced photoinjectors, which are critical to many next generation accelerators, open the door to new ways of material probing, both as injectors for free electron lasers and for ultra-fast electron diffraction. For these applications, the nonuniformity of the electric field near the cathode caused by surface roughness can be the dominant source of beam emittance. Therefore, improving the photocathode roughness while maintaining quantum efficiency is essential to the improvement of beam brightness. In this paper, we report the demonstration of a bi-alkali antimonide photocathode with an order of magnitude improved roughness by sputter deposition from a K2CsSb sputter target, using in situ and operando X-ray characterizations. We found that a surface roughness of 0.5 nm for a sputtered photocathode with a final thickness of 42 nm can be achieved while still yielding a quantum efficiency of 3.3% at 530 nm wavelength. (C) 2017 Author(s).

引用

页数：7

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