A process using ozonated water solutions to remove photoresist after metallization

被引：5
|
作者：
Nelson, SL [1 ]
Carter, LE [1 ]
机构：
[1] FSI Int Inc, Chaska, MN 55318 USA
来源：
SOLID STATE PHENOMENA | 1999年 / 65-6卷
关键词：
ozone; photoresist strip; aluminum;
D O I：
10.4028/www.scientific.net/SSP.65-66.287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We show that compared to photoresist on a silicon (Si) substrate, the presence of exposed aluminum (Al) on a wafer surface greatly reduces the photoresist removal effectiveness of solutions containing only ozone in DI water (DI:O-3). We have found that the addition of ammonium bicarbonate (NH4HCO3) maintains the effectiveness of O-3 for photoresist removal even in the presence of exposed Al. The relevant chemical reactions to explain these results and the optimal process conditions for the O-3 and NH4HCO3 solution are discussed.
引用
收藏
页码：287 / 290
页数：4
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