Electron tunneling through a double quantum dot side coupled to a pair of leads is examined in finite-U slave boson mean field approach. Both the two-impurity Kondo regime at half filling and one-and three-electron Kondo effects are analyzed. Special attention is paid to the case when one of the dots is coupled to ferromagnetic lead and another to nonmagnetic. Depending on the gate voltage, the same or opposite sign of polarizations of conductance of the leads is observed.
机构:
Department of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of ChinaDepartment of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of China
孙复莉
王援东
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机构:
Department of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of ChinaDepartment of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of China
王援东
魏建华
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机构:
Department of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of ChinaDepartment of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of China
魏建华
严以京
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机构:
Hefei National Laboratory for Physical Sciences at the Microscale & Department of Chemical Physics,University of Science and Technology of ChinaDepartment of Physics & Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices,Renmin University of China