Large-Periphery AlGaN/GaN High Electron Mobility Transistors for High-Power Operation

被引：0

作者：

Pang, Liang ^{[1
]}

Zheng, Zhi ^{[1
]}

Seo, Hui-Chan ^{[2
]}

Chapman, Patrick ^{[1
]}

Krein, Philip ^{[1
]}

Lee, Jung-Hee ^{[3
]}

Kim, Ki-Won ^{[3
]}

Kim, Kyekyoon ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, 1406 W Green St, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[3] Kyungpook Natl Univ, Sch Elect & Elect Engn, Taegu 702701, South Korea

来源：

2010 18TH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICRO-NANO SYMPOSIUM | 2010年

关键词：

AlGaN/GaN; HEMT; SAG; PAMBE; power switch; current density; on-state resistance; FIELD-EFFECT TRANSISTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high-power operation achieved by selective-area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvements in current density and on-state resistance were observed when SAG was employed. Maximum current of 1.75A and on-state resistance of 4.76m Omega cm(2) were demonstrated for a large-periphery HEMT with total gate width of 5.2mm. Low Schottky gate leakage current was also realized by the suppression effect of SAG and the use of Si3N4/SiO2 gate insulators, leading to a high gate breakdown voltage of over 200V at a short gate-to-drain distance of 6 mu m.

引用

页数：5

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