Bias voltage-dependent photoinduced current and photoluminescence in organometal perovskite layers on silicon substrates

Thin organometal perovskite layers on crystalline silicon substrates under excitation with nanosecond laser pulses were prepared and investigated to reveal an effect of the bias voltage and parameters of the perovskite/silicon structure on photoinduced current and photoluminescence. Numerical simulations of the diffusion, separation and recombination of photoinduced charge carriers in perovskite/silicon structures were carried out to describe both the photoluminescence transient and time-dependent photocurrent at different bias voltage. While the nonradiative surface recombination does not significantly influence the photoluminescence transients for times shorter than 100 ns, the photoinduced current decreases strongly with increasing the surface recombination velocity. The simulation results were compared with experimental ones obtained for organometal perovskite deposited on substrates of optically polished crystalline silicon wafers of p-type conductivity and those covered with silicon nanowires. The obtained results are discussed in view of possible applications of the investigated structures in photovoltaics and light emitting optoelectronics.