Fabrication of ultrathin film capacitors by chemical solution deposition

被引:0
|
作者
Brennecka, Geoff L. [1 ]
Tuttle, Bruce A. [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1557/JMR.2007.0371
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of >= 1 mm(2) and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Thus, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm(2).
引用
收藏
页码:2868 / 2874
页数:7
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