Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures

被引:62
|
作者
Iwasaki, Takuya [1 ]
Endo, Kosuke [2 ,3 ]
Watanabe, Eiichiro [4 ]
Tsuya, Daiju [4 ]
Morita, Yoshifumi [5 ]
Nakaharai, Shu [2 ]
Noguchi, Yutaka [3 ]
Wakayama, Yutaka [2 ]
Watanabe, Kenji [6 ]
Taniguchi, Takashi [6 ]
Moriyama, Satoshi [2 ]
机构
[1] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan
[2] NIMS, Int Ctr Mat Nanoarchitecton WPI MANA, Tsukuba, Ibaraki 3050044, Japan
[3] Meiji Univ, Sch Sci & Technol, Kawasaki, Kanagawa 2148571, Japan
[4] NIMS, Nanofabricat Platform, Tsukuba, Ibaraki 3050047, Japan
[5] Gunma Univ, Fac Engn, Kiryu, Gunma 3768515, Japan
[6] NIMS, Funct Mat Res Ctr, Tsukuba, Ibaraki 3050044, Japan
基金
日本学术振兴会;
关键词
graphene/hexagonal boron nitride heterostructure; all-dry transfer; bubble-free transfer technique; quantum Hall effect; 2D materials; van der Waals heterostructure; DIRAC FERMIONS; GRAPHENE;
D O I
10.1021/acsami.9b19191
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
y Bubbles at the interface of two-dimensional layered materials in van der Waals heterostructures cause deterioration in the quality of materials, thereby limiting the size and design of devices. In this paper, we report a simple all-dry transfer technique, with which the bubble formation can be avoided. As a key factor in the technique, a contact angle between a picked-up flake on a viscoelastic polymer stamp and another flake on a substrate was introduced by protrusion at the stamp surface. Using this technique, we demonstrated the fabrication of high-quality devices on the basis of graphene/hexagonal boron nitride heterostructures with a large bubble-free region. Additionally, the technique can be used to remove unnecessary flakes on a substrate under an optical microscopic scale. Most importantly, it improves the yield and throughput for the fabrication process of high-quality van der Waals heterostructure-based devices.
引用
收藏
页码:8533 / 8538
页数:6
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