The use of RuO2 resistors as broadband low-temperature radiation sensors

被引:5
|
作者
Lemzyakov, S. A. [1 ]
Edelman, V. S. [2 ]
机构
[1] State Univ, Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141700, Moscow Oblast, Russia
[2] Russian Acad Sci, Kapitza Inst Phys Problems, Ul Kosygina 2, Moscow 119334, Russia
关键词
HEAT-CAPACITY; DEGREES K;
D O I
10.1134/S0020441216040205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The possibility of using commercial RuO2 planar resistors as low-temperature radiation sensors was investigated. At temperatures of 0.08-0.1 K, their sensitivity to blackbody radiation at temperatures of 5-40 K was about 2-3 pW. The radiation absorption coefficient was < 10%. The response is a linear function of the radiation power, thus indicating that the detector band is no narrower than 0.5-2.5 THz. The rise time of an output signal without feedback-assisted temperature stabilization was similar to 12 s owing to an unexpectedly high thermal capacity of the resistor.
引用
收藏
页码:621 / 626
页数:6
相关论文
共 50 条
  • [41] Synthesis and characterization of RuO2 thick film supercapacitor electrode: the effect of low temperature
    İ A Kariper
    F Meydaneri Tezel
    Bulletin of Materials Science, 2021, 44
  • [42] TEMPERATURE DEPENDENCE OF RESISTIVITY OF RUO2 AND IRO2
    RYDEN, WD
    LAWSON, AW
    SARTAIN, CC
    PHYSICS LETTERS A, 1968, A 26 (05) : 209 - &
  • [43] Low-oxidation-state Ru sites stabilized in carbon-doped RuO2 with low-temperature CO2 activation to yield methane
    Carmen Tébar-Soler
    Vlad Martin-Diaconescu
    Laura Simonelli
    Alexander Missyul
    Virginia Perez-Dieste
    Ignacio J. Villar-García
    Jean-Blaise Brubach
    Pascale Roy
    Miguel Lopez Haro
    Jose Juan Calvino
    Patricia Concepción
    Avelino Corma
    Nature Materials, 2023, 22 : 762 - 768
  • [44] Properties of NTD #23 Ge sensors and RuO2 films as thermal sensors for bolometers
    Soudee, J.
    Chardin, G.
    Giraud-Heraud, Y.
    Pari, P.
    Chapellier, M.
    Journal of Low Temperature Physics, 1993, 93 (3-4)
  • [45] LOW-TEMPERATURE FIRED POSITIVE TEMPERATURE-COEFFICIENT RESISTORS
    HO, IC
    HSIEH, HL
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (05) : 471 - 476
  • [46] Low-oxidation-state Ru sites stabilized in carbon-doped RuO2 with low-temperature CO2 activation to yield methane
    Tebar-Soler, Carmen
    Martin-Diaconescu, Vlad
    Simonelli, Laura
    Missyul, Alexander
    Perez-Dieste, Virginia
    Villar-Garcia, Ignacio J.
    Brubach, Jean-Blaise
    Roy, Pascale
    Haro, Miguel Lopez
    Calvino, Jose Juan
    Concepcion, Patricia
    Corma, Avelino
    NATURE MATERIALS, 2023, 22 (06) : 762 - +
  • [47] 1/f noise versus magnetic field in RuO2 based thick film resistors
    Ptak, P
    Kolek, A
    Zawislak, Z
    Mleczko, K
    Stadler, AW
    26TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, CONFERENCE PROCEEDINGS: INTEGRATED MANAGEMENT OF ELECTRONIC MATERIALS PRODUCTION, 2003, : 196 - 201
  • [48] Low-temperature deposition and crystallization of RuO2/TiO2 on cotton fabric for efficient solar photocatalytic degradation of o-toluidine
    Mouheb Sboui
    Hinda Lachheb
    Meenakshisundaram Swaminathan
    Jia Hong Pan
    Cellulose, 2022, 29 : 1189 - 1204
  • [49] Low-temperature deposition and crystallization of RuO2/TiO2 on cotton fabric for efficient solar photocatalytic degradation of o-toluidine
    Sboui, Mouheb
    Lachheb, Hinda
    Swaminathan, Meenakshisundaram
    Pan, Jia Hong
    CELLULOSE, 2022, 29 (02) : 1189 - 1204
  • [50] LOW-TEMPERATURE STRUCTURAL BEHAVIOR OF SR2RUO4
    VOGT, T
    BUTTREY, DJ
    PHYSICAL REVIEW B, 1995, 52 (14) : R9843 - R9846