The use of RuO2 resistors as broadband low-temperature radiation sensors

被引:5
|
作者
Lemzyakov, S. A. [1 ]
Edelman, V. S. [2 ]
机构
[1] State Univ, Moscow Inst Phys & Technol, Inst Skii Per 9, Dolgoprudnyi 141700, Moscow Oblast, Russia
[2] Russian Acad Sci, Kapitza Inst Phys Problems, Ul Kosygina 2, Moscow 119334, Russia
关键词
HEAT-CAPACITY; DEGREES K;
D O I
10.1134/S0020441216040205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The possibility of using commercial RuO2 planar resistors as low-temperature radiation sensors was investigated. At temperatures of 0.08-0.1 K, their sensitivity to blackbody radiation at temperatures of 5-40 K was about 2-3 pW. The radiation absorption coefficient was < 10%. The response is a linear function of the radiation power, thus indicating that the detector band is no narrower than 0.5-2.5 THz. The rise time of an output signal without feedback-assisted temperature stabilization was similar to 12 s owing to an unexpectedly high thermal capacity of the resistor.
引用
收藏
页码:621 / 626
页数:6
相关论文
共 50 条
  • [1] The use of RuO2 resistors as broadband low-temperature radiation sensors
    S. A. Lemzyakov
    V. S. Edelman
    Instruments and Experimental Techniques, 2016, 59 : 621 - 626
  • [2] Low-temperature growth of RuO2 films for conductive electrode applications
    Fröhlich, K
    Cambel, V
    Machajdík, D
    Baumann, PK
    Lindner, J
    Schumacher, M
    Juergensen, H
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) : 173 - 177
  • [3] LOW-TEMPERATURE ZIRCONIA OXYGEN GAUGES BASED ON RUO2 ELECTRODE
    PERIASWAMI, G
    VARAMBAN, SV
    BABU, SR
    MATHEWS, CK
    SOLID STATE IONICS, 1988, 26 (04) : 311 - 317
  • [4] Stable RuO2 thin film resistors
    Jiao, K.L.
    Jia, Q.X.
    Anderson, W.A.
    Collins, F.M.
    Wisniewski, D.T.
    Materials Research Society Symposia Proceedings, 1990,
  • [5] CARBON RESISTORS AS LOW-TEMPERATURE SENSORS IN LOW-TEMPERATURE REACTOR IRRADIATION EXPERIMENTS
    WEHR, G
    SIEBER, G
    BONING, K
    CRYOGENICS, 1977, 17 (01) : 43 - 45
  • [6] STABILITY OF RUO2 THIN-FILM RESISTORS
    JIAO, KL
    JIA, QX
    ANDERSON, WA
    THIN SOLID FILMS, 1993, 227 (01) : 59 - 65
  • [7] Reliability characterization of RuO2 thin film resistors
    Garfias, LF
    Siconolfi, DJ
    Crane, GR
    Comizzoli, RB
    Peins, GA
    CORROSION AND RELIABILITY OF ELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1999, 99 (29): : 217 - 230
  • [8] ANOMALOUS LOW-TEMPERATURE KINETIC EFFECTS FOR OXYGEN EVOLUTION ON RUO2 AND PT ELECTRODES
    ALONSOVANTE, N
    COLELL, H
    STIMMING, U
    TRIBUTSCH, H
    JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (29): : 7381 - 7384
  • [9] RELATION BETWEEN RUO2 VOLUME FRACTION AND RESISTIVITY OF RUO2 GLAZED THICK-FILM RESISTORS
    ABE, O
    TAKETA, Y
    HARADOME, M
    DENKI KAGAKU, 1989, 57 (02): : 157 - 161
  • [10] Failure analysis of RuO2 thick film chip resistors
    Podda, S
    Cassanelli, G
    Fantini, F
    Vanzi, M
    MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1763 - 1767