Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE

被引：10

作者：

Dalmasso, S

Damilano, B

Grandjean, N

Massies, J

Leroux, M

Reverchon, JL

Duboz, JY

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Applicat, F-06560 Valbonne, France

[2] LCR Thales, F-91404 Orsay, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

LEDs; MBE; electroluminescence; tunneling current;

D O I：

10.1016/S0921-5107(00)00766-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light emitting diodes were grown by molecular beam epitaxy using NH, as nitrogen precursor. The active layer is composed by a single plane of undoped InGaN layer with about 15% of In. The structure was buried by 2700 Angstrom of Mg-doped GaN (p = 1 x 10(17) cm(-3)). The turn on voltage is at 4.5 V and the operating voltage is 6.1 V at 20 mA. Temperature dependent I(V) characteristics reveal the predominance of tunneling injection current. We measure room temperature electroluminescence in the blue from 440 to 490 nm with a narrow full width at half maximum. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：256 / 258

页数：3

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