Growth of thin films FeSe1-xTex with PbO-type structure by pulsed laser deposition method

被引:5
|
作者
Imai, Yoshinori [1 ,3 ]
Tanaka, Ryo [1 ,3 ]
Akiike, Takanori [1 ,3 ]
Takahashi, Hideyuki [1 ,3 ]
Hanawa, Masafumi [2 ,3 ]
Tsukada, Ichiro [2 ,3 ]
Maeda, Atsutaka [1 ,3 ]
机构
[1] Univ Tokyo, Dept Basic Sci, Meguro Ku, Tokyo 1538902, Japan
[2] Cent Res Inst Elect Power Ind, Kanagawa 2400916, Japan
[3] Japan Sci & Technol Agcy, Transformat Res Project Iron Pnictides TRIP, Chiyoda Ku, Tokyo 1020075, Japan
关键词
FeSe; Film growth; Pulsed laser deposition;
D O I
10.1016/j.physc.2009.12.045
中图分类号
O59 [应用物理学];
学科分类号
摘要
FeSe1-xTex thin films with a PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 polycrystalline targets by pulsed laser deposition. The film deposited on the MgO substrate (film thickness similar to 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO4 substrate (film thickness similar to 80 nm) exhibits only the onset of superconducting transition at 3.9 K. but does not show zero resistivity above 2 K. This indicates the strong effect of epitaxial strain on the superconducting properties of FeSe1-xTex thin films. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:S305 / S306
页数:2
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