Optimization of film bulk acoustic wave resonator (FBAR) for RF filter applications

被引:0
|
作者
Yim, M [1 ]
Kim, DH [1 ]
Chai, DK [1 ]
Jung, JP [1 ]
Park, J [1 ]
Yoon, G [1 ]
机构
[1] ICU, Yusong Gu, Taejon 305732, South Korea
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present the effects of the thermal annealing of the W/SiO2 multi-layer Bragg reflectors on the resonance characteristics of the ZnO-based film bulk acoustic resonator (FBAR) devices and the use of the cobalt (Co) electrodes instead of the aluminum (Al) electrodes to optimize the FBAR for RF filter applications. The resonance characteristics could be significantly improved by the thermal annealing and using the Co as the electrodes in FBAR devices. The FBAR devices with the Bragg reflectors annealed at 400degreesC/30min show excellent resonance characteristics in term of the return loss and Q-factor.
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页码:389 / 392
页数:4
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