A 1.5-V HIGH-Q CMOS active inductor for IF/RF wireless applications

被引：10

作者：

Thanachayanont, A ^{[1
]}

机构：

[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Dept Elect Engn, Res Ctr Communicat & Informat Technol, Bangkok 10520, Thailand

来源：

2000 IEEE ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS: ELECTRONIC COMMUNICATION SYSTEMS | 2000年

关键词：

D O I：

10.1109/APCCAS.2000.913605

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, a new circuit configuration of VHF CMOS transistor-only active inductor which allows very high frequency operation under low power supply voltages (< 2 V) is proposed. Gain enhancement techniques are applied to reduce the inductor losses achieving high-Q and wide operating bandwidth. HSPICE simulations using process parameters from a 0.35-mum CMOS technology show that the proposed floating active inductor operates under a single 1.5-V power supply voltage, exhibiting a self-resonant frequency of 2.5 GHz and a quality factor greater than 120 (phase errors < 0.5 degrees) over the operating frequencies extending from 500 MHz to 1 GHz.

引用

页码：654 / 657

页数：4

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