Preparation and characterization of amorphous SiO2 nanowires

被引：10
|
作者：
Zhuo, Boshi [1 ]
Li, Yuguo [1 ]
Zhang, Xiaokai [1 ]
Yang, Aichun [1 ]
机构：
[1] Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 172卷 / 01期
关键词：
SiO2; Nanowires; Annealing; Amorphous; SILICON SUBSTRATE; NANO-WIRES; GROWTH; OXIDE;
D O I：
10.1016/j.mseb.2010.04.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous SiO2 nanowires were prepared by heating Si powder and Au-coated Si(1 1 1) substrates for different times. The SiO2 nanowires were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The results show that large amounts of amorphous SiO2 nanowires with a diameter of about 40 nm were formed on the entire surface of the substrates. Au particles were observed at the tip of the SiO2 nanowires, which is consistent with the well-known vapor-liquid-solid (VLS) process. It is found that the annealing time affects the morphology of the products. Finally, the growth mechanism of the SiO2 nanowires was discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：15 / 17
页数：3
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