Fully Symmetric Vertical Hall Devices in CMOS Technology

被引：0

作者：

Sander, C. ^{[1
]}

Raz, R. ^{[1
]}

Ruther, P. ^{[1
]}

Paul, O. ^{[1
]}

Kaufmann, T. ^{[2
]}

Cornils, M. ^{[2
]}

Vecchi, M. C. ^{[2
]}

机构：

[1] Dept Microsyst Engn IMTEK, Lab Microsyst Mat, Freiburg, Germany

[2] Micronas GmbH, Freiburg, Germany

来源：

2013 IEEE SENSORS | 2013年

关键词：

OFFSET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel CMOS-integrated, vertical Hall sensor (VHS) with optimized symmetry for the measurement of in-plane magnetic field components. Due to the junction field effect, conventional five-contact VHS (5CVHS) suffer from considerable offsets caused by their inherent electrical asymmetry under contact permutations. The novel device achieves a higher degree of symmetry by the appropriate connection of four identical three-contact elements. As a result, with a bias voltage of 3.5 V and after current switching a mean residual offset of 2.5 mu V with a standard deviation of 33.8 mu V is achieved among 45 samples on an 8-inch wafer. This represents an improvement by a factor of more than 4 over 5CVHS fabricated on the same wafer. In addition, the power consumption is reduced by 47%.

引用

页码：644 / 647

页数：4

共 50 条

[1] Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology
Huang, Haiyun
Xu, Yue
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 820 - 826
[2] Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology
Huang, Haiyun
Xu, Yue
IEEE Journal of the Electron Devices Society, 2021, 9 : 820 - 826
[3] Hot carrier Hall devices in CMOS technology
Janossy, B
Haddab, Y
Villiot, JM
Popovic, RS
SENSORS AND ACTUATORS A-PHYSICAL, 1998, 71 (03) : 172 - 178
[4] On performance of series connected CMOS vertical hall devices
Banjevic, Mirjana
Reymond, Serge
Popovic, Radivoje S.
2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 337 - 340
[5] Piezo-Hall Effect in CMOS-Based Vertical Hall Devices
Kaufmann, T.
Kopp, D.
Kunzelmann, M.
Ruther, P.
Paul, O.
2011 IEEE SENSORS, 2011, : 440 - 443
[6] A vertical hall device in standard submicron CMOS technology
Pascal, Joris
Hebrard, Luc
Kammerer, Jean-Baptiste
Frick, Vincent
Blonde, Jean-Philippe
2007 IEEE SENSORS, VOLS 1-3, 2007, : 1480 - 1483
[7] Intrinsic limits of the sensitivity of CMOS integrated vertical Hall devices
Pascal, Joris
Hebrard, Luc
Frick, Vincent
Kammerer, Jean-Baptiste
Blonde, Jean-Philippe
SENSORS AND ACTUATORS A-PHYSICAL, 2009, 152 (01) : 21 - 28
[8] A vertical Hall device in cmos high-voltage technology
Schurig, E
Demierre, A
Schott, C
Popovic, RS
TRANSDUCERS '01: EUROSENSORS XV, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2001, : 140 - 143
[9] A vertical Hall device in CMOS high-voltage technology
Schurig, E
Demierre, M
Schott, C
Popovic, RS
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 97-8 : 47 - 53
[10] Simulation of vertical hall sensor in high-voltage CMOS technology
Jovanovic, E
Pantic, D
Pantic, D
TELSIKS 2003: 6TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICE, VOLS 1 AND 2, PROCEEDINGS OF PAPERS, 2003, : 811 - 814

← 1 2 3 4 5 →