Effects of La doping on Mg2Si semiconductor thin films prepared by thermal evaporation

被引：7
|
作者：
Yu, Hong [1 ]
Luo, Yuee [1 ]
Wang, Xuewen [1 ]
He, Yi [1 ]
Xu, Lin [2 ]
机构：
[1] Guizhou Educ Univ, Sch Phys & Elect Sci, Guiyang 550018, Guizhou, Peoples R China
[2] Guizhou Educ Univ, Lab Surface Phys & Chem, Guiyang 550018, Guizhou, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Mg2Si thin film; thermal evaporation; La doping; THERMOELECTRIC PROPERTIES;
D O I：
10.1088/2053-1591/aaeaef
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
La doped Mg2Si semiconductor thin films were prepared on n-Si (111) substrate by thermal evaporation. The structure, morphology and optical properties of La doped Mg2Si thin films were investigated by x-ray diffractometer (XRD), field-emission scanning electron microscopy (FESEM) and Raman spectrometer (RAMAN). XRD results show that after doping La, the Mg2Si diffraction peak decreases and shifts to a low angle, and the lattice constant increases. FESEM results show that after doping La, the size of Mg2Si crystallite decreases and the crystallites aggregate into clusters. RAMAN results show that the intensity of characteristic Raman peaks near 256 and 690 cm(-1) decreases after incorporation of La.
引用
收藏
页数：5
相关论文
共 50 条
  • [41] Thin film growth of semiconducting Mg2Si by codeposition
    Vantomme, A
    Mahan, JE
    Langouche, G
    Becker, JP
    VanBael, M
    Temst, K
    VanHaesendonck, C
    APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1086 - 1088
  • [42] Mechanical softening of thermoelectric semiconductor Mg2Si from nanotwinning
    Li, Guodong
    An, Qi
    Morozov, Sergey I.
    Duan, Bo
    Goddard, William A., III
    Zhai, Pengcheng
    Zhang, Qingjie
    Snyder, G. Jeffrey
    SCRIPTA MATERIALIA, 2018, 157 : 90 - 94
  • [43] Photoluminescence of Mg2Si films fabricated by magnetron sputtering
    Liao, Yang-Fang
    Xie, Quan
    Xiao, Qing-Quan
    Chen, Qian
    Fan, Meng-Hui
    Xie, Jing
    Huang, Jin
    Zhang, Jin-Min
    Ma, Rui
    Wang, Shan-Lan
    Wu, Hong-Xian
    Fang, Di
    APPLIED SURFACE SCIENCE, 2017, 403 : 302 - 307
  • [44] Interplay between structural changes, surface states and quantum confinement effects in semiconducting Mg2Si and Ca2Si thin films
    Alekseev, A. Yu.
    Migas, D. B.
    Filonov, A. B.
    Galkin, N. G.
    Skorodumova, N. V.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (29) : 19952 - 19962
  • [45] FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si
    Chernev I.M.
    Gouralnik A.S.
    Subbotin E.Y.
    Galkin K.N.
    Kropachev O.V.
    Goroshko D.L.
    Goroshko O.A.
    Gerasimenko A.V.
    Lisenkov O.E.
    Galkin N.G.
    Bulletin of the Russian Academy of Sciences: Physics, 2023, 87 (Suppl 3) : S370 - S374
  • [46] A mass spectrometric study of thermal dissociation of Mg2Si
    Butman, MF
    Kudin, LS
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY, 2003, 77 (04): : 537 - 542
  • [47] Structural, electronic, elastic and thermal properties of Mg2Si
    Yu, Benhai
    Chen, Dong
    Tang, Qingbin
    Wang, Chunlei
    Shi, Deheng
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (05) : 758 - 763
  • [48] Solid phase growth and properties of Mg2Si films on Si(111)
    Galkin, N. G.
    Vavanova, S. V.
    Masjov, A. M.
    Galkin, K. N.
    Gerasimenko, A. V.
    Kaidalova, T. A.
    THIN SOLID FILMS, 2007, 515 (22) : 8230 - 8236
  • [49] Electrical and optical properties of thick Mg2Si films on Si(111)
    Galkin, NG
    Vavanova, SV
    Maslov, AM
    Galkin, KN
    FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS, 2003, 5129 : 313 - 323
  • [50] Hydrogen storage properties of Mg and Mg-Ni films prepared by thermal evaporation
    Wang, H
    Ouyang, LZ
    Zeng, MQ
    Zhu, M
    ACTA METALLURGICA SINICA, 2004, 40 (05) : 531 - 536
12345