Theoretical and experimental investigation on carrier recovery time in semiconductor optical amplifier

被引：0
|
作者：
Jiang, Z [1 ]
Zhang, XL [1 ]
Liu, DM [1 ]
Huang, DX [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Optoelect, Wuhan 430074, Peoples R China
来源：
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES | 2005年 / 5624卷
关键词：
semiconductor optical amplifier (SOA); carrier recovery time; amplified spontaneous emission (ASE); facet reflectivity;
D O I：
10.1117/12.570686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A relatively perfect steady-state and dynamic numerical model of SOA considering facet reflectivity, gain dispersion and amplified spontaneous emission (ASE) spectrum is established to make it closer to reality. Based on the proposed numerical model, carrier recovery time is investigated under different external conditions theoretically and experimentally. Via the analysis of results of simulation and experiments, schemes for accelerating carrier recovery are explored.
引用
收藏
页码：563 / 574
页数：12
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