Proposal of Ge/SiGe Five-Layer Asymmetric Coupled Quantum Well for Mach-Zehnder Modulators

被引：0
|
作者：
Iseri, Yuji [1 ]
Arakawa, Taro [1 ]
Tada, Kunio [2 ]
Haneji, Nobuo [1 ]
机构：
[1] Yokohama Natl Univ, Grad Sch Engn, Hodogaya Ku, 79-5 Tokiwadai, Yokohama, Kanagawa 2408501, Japan
[2] Kanazawa Inst Technol, Grad Sch Engn, Tokyo 1050002, Japan
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
关键词：
Germanium; quantum confined Stark effect; electrorefractive effect; Mach-Zehnder modulator; SILICON;
D O I：
10.1109/LEOS.2009.5343248
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ge/SiGe five-layer asymmetric coupled quantum well (FACQW) for optical modulators based on phase modulation is proposed and theoretically analyzed. The FACQW is expected to exhibit large electrorefractive index change comparable to InGaAs/InAlAs FACQW.
引用
收藏
页码：307 / +
页数：2
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