Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)

被引：3
|
作者：
Arakawa, T
Tada, K
Iino, R
Suzuki, T
Noh, JH
Haneji, N
Feng, H
机构：
[1] Yokohama Natl Univ, Grad Sch Engn, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan
[2] Fujitsu Cpd Semiconductor, San Jose, CA USA
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
five-layer asymmetric coupled quantum well; electrorefractive index change; thickness fluctuation;
D O I：
10.1016/S0026-2692(03)00031-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study in detail a modified structure of the five-layer asymmetric coupled quantum well (FACQW) for a large negative electrorefractive index change Deltan. The influence of the layer thickness fluctuation on Deltan of the modified FACQW is also discussed. Even with layer thickness fluctuation, the modified FACQW still maintains a much larger Deltan than a conventional rectangular quantum well without thickness fluctuation. The results of photocurrent measurements of the modified FACQW qualitatively are in agreement with the theoretical analysis. (C) 2003 Published by Elsevier Science Ltd.
引用
收藏
页码：387 / 390
页数：4
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