SiGe 140 GHz ring-oscillator-based injection-locked frequency divider

被引：5

作者：

Seo, Hyogi ^{[1
]}

Yun, Jongwon ^{[2
]}

Rieh, Jae-Sung ^{[2
]}

机构：

[1] LG Elect, Seoul, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul, South Korea

来源：

ELECTRONICS LETTERS | 2012年 / 48卷 / 14期

关键词：

RANGE;

D O I：

10.1049/el.2012.1273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is a D-band divide-by-3 injection-locked frequency divider (ILFD) based on a ring oscillator in a 0.18 mu m SiGe BiCMOS technology. The ILFD exhibits a locking range of 7.9 GHz (132.5-140.4 GHz) at an input signal power of -2 dBm, dissipating a total DC power of 71.2 mW. The ILFD core occupies an area of 0.0021 mm(2).

引用

页码：847 / U68

页数：2

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