Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

被引：5
|
作者：
Wang, Lei [1 ,2 ,3 ]
Wang, Jun [1 ,2 ,3 ]
Li, Rui [1 ,2 ,3 ]
Lee, Poo [3 ]
Hu, Jian [3 ]
Qu, Will [3 ]
Li, Wenjun [3 ]
Yang, Steve [3 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing, Peoples R China
[3] Grace Semicond Mfg Corp, Shanghai, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期
关键词：
D O I：
10.1088/0268-1242/23/7/075025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two simple methods to suppress anomalous subthreshold conduction, the so-called 'kink effect' of lateral double-diffused MOS (LDMOS), were demonstrated. According to TSUPREM-4 simulation and calculation results, LDMOSFETs were more prone to subthreshold kinks than standard CMOSFETs because of the oxidation-enhanced-diffusion (OED) effect and small gate capacitor. The fringing electrical field, which arises from a shallow trench isolation (STI) divot, was remarkably eliminated by the improved isolation scheme. A novel device layout was designed so that the channel dopant segregation can be automatically compensated without any extra processing steps.
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收藏
页数：5
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